isc N-Channel MOSFET Transistor

IXFN360N15T2

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage VGS= 0V; ID= 3mA

150

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 150V; VGS= 0V

--

--

50

uA

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0V

--

--

±

200

nA

VGS(th)

Gate Threshold Voltage

VDS =VGS; ID= 8mA

2.5

--

5.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 60A

--

--

4.0

mΩ

VSD

Forward On-Voltage

IS= 60A; VGS= 0V

--

--

1.2

V

PACKAGE(UNIT:MM)

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you