isc

Thyristor

TPDV640RG

www.iscsemi.com

2

RθJC

Thermal Resistance, Junction−to−Case,DC

1.2

℃

/W

VINS(RMS) Insulation rms voltage

2500

V

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM

--

20

uA

IDRM

Repetitive peak off-state current

VD=VDRM

--

20

uA

IGT

Gate trigger current：I-II-III,VD= 12V,RL=33Ω

--

200

mA

VGT

Gate trigger voltage：I-II-III,VD= 12V,RL=33Ω

--

1.5

V

IH

Holding current,IT=0.5A,Gate open(TYP)

--

55

mA

VT

on-state voltage

IT=56A,tp=380us

--

1.8

V

PACKAGE OUTLINE

Dimensions in mm

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment which

could have applications in hazardous environments, aerospace industry, or medical field. Please contact

us if you intend our products to be used in these special applications.ISC makes no warranty or

guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any