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STW20NK50Z データシート(PDF) 3 Page - STMicroelectronics

部品番号 STW20NK50Z
部品情報  N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™MOSFET
PDF  13 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW20NK50Z データシート(HTML) 3 Page - STMicroelectronics

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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON/OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1mA,VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating,TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID = 8.5 A
0.23
0.27
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V, ID =8.5 A
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
2600
328
72
pF
pF
pF
Coss eq. (3)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 640V
187
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =250 V, ID =8.5 A
RG =4.7Ω , VGS =10V
(Resistive Load see, Figure 3)
28
20
70
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400 V, ID =17 A,
VGS =10 V
85
15.5
42
119
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
17
68
A
A
VSD (1)
ForwardOnVoltage
ISD =17A,VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =17A,di/dt =100 A/µs
VR = 100 V, Tj =25°C
(see test circuit, Figure 5)
355
3.90
22
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =17A,di/dt =100 A/µs
VR = 100 V, Tj =150°C
(see test circuit, Figure 5)
440
5.72
26
ns
µC
A



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