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SD56120 データシート(PDF) 1 Page - STMicroelectronics |
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SD56120 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s EXCELLENT THERMAL STABILITY s COMMON SOURCE CONFIGURATION, PUSH-PULL s POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz s BeO FREE PACKAGE DESCRIPTION The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. PIN CONNECTION November 1999 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 65 V VGS Gate-Source Voltage ± 20 V ID Drain Current 14 A PDISS Power Dissipation (@ Tc= 70 o C) 260 W Tj Max. Operating Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA Rth(j-c) Junction-Case Thermal Resistance 0.5 oC/W M246 epoxy sealed ® ORDER CODE BRANDING SD56120 XSD56120 1. Drain 4. Gate 2. Drain 5. Gate 3. Source 1/4 |
同様の部品番号 - SD56120 |
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同様の説明 - SD56120 |
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