VT6Z2

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Tr1(PNP)

Tr2(NPN)

Unit

Collector-base voltage

VCBO

-50

50

V

Collector-emitter voltage

VCEO

-50

50

V

Emitter-base voltage

VEBO

-5

5

V

Collector current

IC

-100

100

mA

ICP*1

-200

200

mA

Power dissipation

PD*2*3

150

mW/Total

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C) <For Tr1(PNP)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown voltage

BVCBO

IC = -50μA

-50

-

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = -1mA

-50

-

-

V

Emitter-base breakdown voltage

BVEBO

IE = -50μA

-5

-

-

V

Collector cut-off current

ICBO

VCB = -50V

-

-

-100

nA

Emitter cut-off current

IEBO

VEB = -5V

-

-

-100

nA

Collector-emitter saturation voltage

VCE(sat)

IC = -50mA, IB = -5mA

-

-150

-400

mV

DC current gain

hFE

VCE = -6V, IC = -1mA

120

-

560

-

Transition frequency

fT

VCE = -10V, IE = 10mA,

f = 100MHz

-

300

-

MHz

Output capacitance

Cob

VCB = -10V, IE = 0A,

f = 1MHz

-

2.0

-

pF

l

lElectrical characteristics (Ta = 25°C) <For Tr2(NPN)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown voltage

BVCBO

IC = 50μA

50

-

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = 1mA

50

-

-

V

Emitter-base breakdown voltage

BVEBO

IE = 50μA

5

-

-

V

Collector cut-off current

ICBO

VCB = 50V

-

-

100

nA

Emitter cut-off current

IEBO

VEB = 5V

-

-

100

nA

Collector-emitter saturation voltage

VCE(sat)

IC = 50mA, IB = 5mA

-

100

300

mV

DC current gain

hFE

VCE = 6V, IC = 1mA

120

-

560

-

Transition frequency

fT

VCE = 10V, IE = -10mA,

f = 100MHz

-

350

-

MHz

Output capacitance

Cob

VCB = 10V, IE = 0A,

f = 1MHz

-

1.6

-

pF

*1 Pw=10ms Single Pulse

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

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