SGSD100 datasheet(1/6 Pages) STMICROELECTRONICS

部品番号	SGSD100

部品情報	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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SGSD100

SGSD200

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

COMPLEMENTARY PNP - NPN DEVICES

s

MONOLITHIC DARLINGTON

CONFIGURATION

APPLICATIONS:

s

GENERAL PURPOSE SWITCHING

APPLICATION

s

GENERAL PURPOSE AMPLIFIERS

DESCRIPTION

The SGSD100 is silicon epitaxial-base NPN

power

transistor

in

monolithic

Darlington

configuration

mounted

in

TO-218

plastic

package.

It is inteded for use in general purpose and high

current amplifier applications.

The complementary PNP type is the SGSD200.

INTERNAL SCHEMATIC DIAGRAM

September 1997

1

2

3

TO-218

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

SGSD100

PNP

SGSD200

VCBO

Collector-Base Volta ge (IE =0)

80

V

VCEO

Collector-Emitte r Voltage (IB =0 )

80

V

IC

Collector Current

25

A

ICM

Collector Peak Current

40

A

IB

Base Current

6

A

IBM

Base Peak Current

10

A

Ptot

Total Dissipation at Tc

≤ 25 oC

130

W

Tstg

Storage Temp erature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

For PNP types voltage and current values are negative.

1/6

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