TTC012 datasheet(1/2 Pages) ISC

部品番号	TTC012

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

TTC012

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 375V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat) :0.5V(Max) @IC= 0.5A

APPLICATIONS

· High-Speed DC-DC Converters

· Switching Voltage Regulators

· High-Speed DC-DC Converters

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

800

V

VCEO

Collector-Emitter Voltage

375

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current

2

A

ICP

Collector Current-Pulse

3

A

IB

Base Current

1

A

PC

Total Power Dissipation

1.1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - TTC012

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	TTC012	190Kb / 6P	Bipolar Transistors Silicon NPN Triple-Diffused Type

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