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EMLS232TA データシート(PDF) 6 Page - Emerging Memory & Logic Solutions Inc

部品番号 EMLS232TA
部品情報  512K x 32 x 4Banks Low Power SDRAM Specificaton
PDF  14 Pages
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メーカー  EMLSI [Emerging Memory & Logic Solutions Inc]
ホームページ  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMLS232TA データシート(HTML) 6 Page - Emerging Memory & Logic Solutions Inc

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Rev 0.3
EMLS232TA Series
512K x 32 x 4Banks Low Power SDRAM
ABSOLUTE MAXIMUM RATINGS
NOTE :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25oC~ 85oC for Extended, 0oC~ 70oC for Commercial)
NOTE :
1. Under all conditions VDDQ must be less than or equal to VDD.
2.VIH (max) = 4.3V AC. The overshoot voltage duration is
3
3.VIL (min) = -1.5V AC. The undershoot voltage duration is
3 .
4.Any input 0V
VIN
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5.Dout is disabled, 0V
VOUT
VDDQ.
CAPACITANCE
(VDD = 2.8V, TA = 23 , f=1 , VREF =0.9V
50
)
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-1.0 ~ 4.0
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.0
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
2.6
2.8
3.0
V
1
VDDQ
2.6
2.8
3.0
V
1
Input logic high voltage
VIH
0.8 x VDDQ
2.8
VDDQ + 0.3
V
2
Input logic low voltage
VIL
-0.3
0
0.3
V
3
Output logic high voltage
VOH
0.9 x VDDQ
-
-
V
IOH = -0.1
Output logic low voltage
VOL
-
-
0.2
V
IOL = 0.1
Input leakage current
ILI
-2
-
2
4
Pin
Symbol
Min
Max
Unit
Note
Clock
CCLK
1.5
3.5
RAS, CAS, WE, CS, CKE, DQM0~DQM3
CIN
1.5
3.0
Address
CADD
1.5
3.0
DQ0 ~ DQ31
COUT
2.0
4.5



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