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EMD12324P データシート(PDF) 2 Page - Emerging Memory & Logic Solutions Inc

部品番号 EMD12324P
部品情報  512M: 16M x 32 Mobile DDR SDRAM
PDF  44 Pages
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メーカー  EMLSI [Emerging Memory & Logic Solutions Inc]
ホームページ  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMD12324P データシート(HTML) 2 Page - Emerging Memory & Logic Solutions Inc

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EMD12324P
512M: 16M x 32 Mobile DDR SDRAM
Rev 0.0
Preliminary
512M : 16M x 32bit Mobile DDR SDRAM
Table 1: ORDERING INFORMATION
NOTE :
1. EMLSI is not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in EMLSI when considering the use of a product contained herein for any specific purpose,
such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Part No.
Max Freq.
Interface
Package
Remark
EMD12324P-60(DDR332)
166 (CL3), 111 (CL2)
LVCMOS
Wafer Biz.
EMD12324P-75(DDR266)
133 (CL3), 83 (CL2)
FEATURES
1.8V power supply, 1.8V I/O power
LVCMOS compatible with multiplexed address.
Double-data-rate architecture; two data transfers per clock
cycle
Bidirectional data strobe(DQS)
Four banks operation.
MRS cycle with address key programs.
CAS latency (2, & 3).
Burst length (2, 4, & 8).
Burst type (Sequential & Interleave).
Differential clock inputs(CK and CKB).
EMRS cycle with address key programs.
PASR(Partial Array Self Refresh).
DS (Driver Strength)
Internal auto TCSR
(Temperature Compensated Self Refresh)
Deep power-down(DPD) mode.
DM for write masking only.
Auto refresh and self refresh modes.
64
refresh period (8K cycle).
Operating temperature range (-25
~ 85 ).
GENERAL DESCRIPTION
This EMD12324P is 536,870,912 bits synchronous double data
rate Dynamic RAM. Each 134,217,728 bits bank is organized as
8,192 rows by 512columns by 32 bits, fabricated with EMLSI’s
high performance CMOS technology.
This device uses a double data rate architecture to achieve high-
speed operation. The double data rate architecture is essentially
a 2n-prefetch architecture with an interface designed to transfer
two data words per clock cycle at the I/O balls.
Range of operating frequencies, programmable burst lengths
and programmable latencies allow the same device to be useful
for a variety of high bandwidth and high performance memory
system applications.



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