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STB55NE06L データシート(PDF) 3 Page - STMicroelectronics

部品番号 STB55NE06L
部品情報  N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
PDF  5 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB55NE06L データシート(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 30 V
ID = 27.5 A
RG =4.7
Ω
VGS = 5 V
40
100
55
140
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V
ID = 55 A
VGS = 5 V
40
13
20
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V
ID = 55 A
RG =4.7
Ω VGS = 5 V
25
40
65
35
55
90
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
55
220
A
A
VSD (
∗)
Forward On Voltage
ISD = 55 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 55 A
di/dt = 100 A/
µs
VDD = 30 V
Tj = 150
oC
65
180
5.5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STB55NE06L
3/5



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