BD239C datasheet(3/9 Pages) STMICROELECTRONICS

部品番号	BD239C

部品情報	NPN power transistor

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BD239C

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

2.1

Electrical characteristic (curves)

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 100V

0.2

ICEO

Collector cut-off current

(IB = 0)

VCE = 60V

0.3

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

1mA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = 30mA

100

VCE(sat) (1)

Collector-emitter

saturation voltage

IC = 1A

IB = 0.2A

0.7

VBE (1)

Base-emitter voltage

IC = 1A _ _

VCE= 4V

1.3

hFE

DC current gain

IC = 0.2A

_ _ VCE = 4V

IC = 1A

VCE = 4V

Figure 2.

Safe operating area

Figure 3.

Derating curve

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