STBV32 datasheet(1/7 Pages) STMICROELECTRONICS

部品番号	STBV32

部品情報	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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STBV32

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

ST13003 SILICON IN TO-92 PACKAGE

s

MEDIUM VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The STBV32 is designed for use in compact

fluorescent lamp application.

®

INTERNAL SCHEMATIC DIAGRAM

February 2000

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VCES

Collector-Emit ter Volt age (VBE = 0)

700

V

VCEO

Collector-Emit ter Volt age (IB = 0)

400

V

VEBO

Emitt er-Base Voltage (IC =0)

9

V

IC

Collector Current

1.5

A

ICM

Collector Peak Current (tp <5 ms)

3

A

IB

Base Current

0. 75

A

IBM

Base Peak Current (tp <5 ms)

1.5

A

Ptot

Tot al Dissipation at Tc =25

oC1.1

W

Tstg

St orage Temperature

-65 to 150

oC

Tj

Max. Operat ing Junction Temperat ure

150

oC

TO-92

1/7

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同様の説明 - STBV32

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STBV32 データシート(PDF) 1 Page - STMicroelectronics

STBV32 データシート(HTML) 1 Page - STMicroelectronics

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