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L6386ED データシート(PDF) 1 Page - STMicroelectronics |
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L6386ED データシート(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() October 2007 Rev 1 1/18 18 L6386E High-voltage high and low side driver Features ■ High voltage rail up to 600V ■ dV/dt immunity ±50V/nsec in full temperature range ■ Driver current capability: – 400mA source, – 650mA sink ■ Switching times 50/30 nsec rise/fall with 1nF load ■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down ■ Under voltage lock out on lower and upper driving section ■ Integrated bootstrap diode ■ Outputs in phase with inputs Description The L6386E is an high-voltage device, manufactured with the BCD "OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices. DIP-14 SO-14 www.st.com Figure 1. Block diagram LOGIC UV DETECTION LEVEL SHIFTER UV DETECTION R R S VCC LVG DRIVER VCC HIN SD HVG DRIVER HVG H.V. TO LOAD OUT LVG PGND D97IN520D LIN DIAG VREF BOOTSTRAP DRIVER Vboot CIN CBOOT SGND 5 7 6 8 9 12 13 14 1 2 3 4 |
同様の部品番号 - L6386ED |
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同様の説明 - L6386ED |
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