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STA680Q データシート(PDF) 39 Page - STMicroelectronics

部品番号 STA680Q
部品情報  HD Radio base-band receiver
PDF  43 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA680Q データシート(HTML) 39 Page - STMicroelectronics

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STA680
Electrical specifications
39/43
Vesd
Electrostatic discharge voltage
Human Body Model
2000
V
Machine Model
200
V
Charge device Model
500
V
Ilatchup
Injection current
Maximum operating
junction temperature
125
°C
100
mA
VDD_RAM_IO
SDRAM IO supply voltage
3.0
3.3
3.6
V
Iil_ram
Low level input leakage
current(1)
Vi = 0V
µA
Iih_ram
High level input leakage
current(1)
Vi = VDD_RAM_IO
µA
Ilpu_ram
High level input leakage
current on pull up(3)
Vi = VDD_RAM_IO
µA
Ilpd_ram
Low level input leakage
current on pull-down(4)
Vi = 0V
µA
Ipu_ram
Pull-up current
Vi = 0V
44
122
µA
Ipd_ram
Pull-down current
Vi = VDD_RAM_IO
29
122
µA
Rpu_ram
Equivalent pull-up
resistance(5)
Vi = 0V
29
67
K
Ω
Rpd_ram
Equivalent pull-down
resistance(6)
Vi = VDD_RAM_IO
29
103
K
Ω
Vil_ram
Low level input voltage
0.8
V
Vih
_ram
High level input voltage
2
V
Vhyst_ram
Schmitt trigger hysteresis
300
800
mV
Voh_ram
High level output voltage
Ioh = -XmA(7)
VDD_R
AM_IO
-
0.3
V
Vol_ram
Low level output voltage
Iol =XmA(7)
0.3
V
1.
Performed on all the input pins excluded the pull-down and pull-up ones.
2.
VDD_GEN_IO may be VDD_FHS_IO or VDD_GEN_IO depending on interface considered.
3.
Performed only on the Input pins with pull up.
4.
Performed only on the Input pins with pull down.
5.
Guaranteed by Ipu measurements.
6.
Guaranteed by Ipd measurements.
7.
XmA = 4mA for a BD4, 8mA for BD8 pad type.
Table 22.
DC electrical characteristics (continued)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit



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