STP4NB80 datasheet(1/9 Pages) STMICROELECTRONICS

部品番号	STP4NB80

部品情報	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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STP4NB80

STP4NB80FP

N - CHANNEL 800V - 3

Ω - 4A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

September 2001

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP4NB80

STP4NB80FP

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

4

4(*)

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

2.4(*)

A

IDM(

•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at Tc = 25

o C

100

35

W

Derating Factor

0.8

0.28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2500

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

STP4NB80

STP4NB80FP

800 V

3.3

Ω

3.3

Ω

4 A

1/9

同様の部品番号 - STP4NB80

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STP4NB80	372Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP4NB80FP	2Mb / 9P	Power MOSFET
Inchange Semiconductor ...	STP4NB80FP	319Kb / 2P	isc N-Channel MOSFET Transistor

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同様の説明 - STP4NB80

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