STP7NB30 datasheet(1/9 Pages) STMICROELECTRONICS

部品番号	STP7NB30

部品情報	N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

Logo

1 / 9 page

STP7NB30

STP7NB30FP

N - CHANNEL 300V - 0.75

Ω - 7A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.75

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

August 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST P7NB30

STP7NB30F P

VDS

Drain-source Voltage (VGS = 0)

300

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

300

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC7

4

A

ID

Drain Current (continuous) at Tc =100

oC4.4

2.5

A

IDM (

•)

Drain Current (pulsed)

28

A

Ptot

T otal Dissipat ion at Tc =25

oC85

30

W

Derating Factor

0.68

0.24

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

VISO

I nsulation W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P7NB30

ST P7NB30FP

300 V

<0.90

Ω

<0.90

Ω

7A

4A

1/9

同様の部品番号 - STP7NB30

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STP7NB30FP	372Kb / 2P	isc N-Channel MOSFET Transistor

More results

同様の説明 - STP7NB30

メーカー	部品番号	データシート	部品情報
STMicroelectronics	IRF840	93Kb / 8P	N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET Aug-1998
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET Apr-2003
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP7NC40	244Kb / 8P	N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMESH™ I MOSFET Mar-2001
	STP8NC60	326Kb / 9P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET Jul-2001
	STGF7NB60SL	257Kb / 9P	N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT 04-Jun-2004
List of Unclassifed Man...	9858	258Kb / 9P	N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT