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2N3019 データシート(PDF) 2 Page - STMicroelectronics

部品番号 2N3019
部品情報  SMALL SIGNAL NPN TRANSISTOR
PDF  4 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2N3019 データシート(HTML) 2 Page - STMicroelectronics

  2N3019_02 Datasheet HTML 1Page - STMicroelectronics 2N3019_02 Datasheet HTML 2Page - STMicroelectronics 2N3019_02 Datasheet HTML 3Page - STMicroelectronics 2N3019_02 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
30
187.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 90 V
VCB = 90 V
TC = 150
oC
10
10
nA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
140
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
80
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
µA
7V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.2
0.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
1.1
V
hFE
∗
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 1A
VCE = 10 V
IC = 150 mA
VCE = 10 V
Tamb = -55
o C
50
90
100
50
15
40
300
hfe
∗
Small Signal Current
Gain
IC = 1 mA
VCE = 5 V
f = 1KHz
80
400
fT
Transition Frequency
IC = 50 mA
VCE = 10 V f = 20MHz
100
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1MHz
12
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
60
pF
NF
Noise Figure
IC = 0.1 mA
VCE = 10 V
f = 1KHz
Rg = 1K
Ω
4dB
rbb’ Cb’c
Feedback Time
Constant
IC = 10 mA
VCE = 10 V
f = 4MHz
400
ps
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2N3019
2/4



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