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STPS30H100CW データシート(PDF) 2 Page - STMicroelectronics

部品番号 STPS30H100CW
部品情報  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PDF  4 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30H100CW データシート(HTML) 2 Page - STMicroelectronics

  STPS30H100CW Datasheet HTML 1Page - STMicroelectronics STPS30H100CW Datasheet HTML 2Page - STMicroelectronics STPS30H100CW Datasheet HTML 3Page - STMicroelectronics STPS30H100CW Datasheet HTML 4Page - STMicroelectronics  
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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
Total
1.6
0.9
°C/W
Rth (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25
°CVR = VRRM
5
µA
Tj = 125
°C2
6
mA
VF **
Forward voltage drop
Tj = 25
°CIF = 15 A
0.80
V
Tj = 125
°CIF = 15 A
0.64
0.67
Tj = 25
°CIF = 30 A
0.93
Tj = 125
°CIF = 30 A
0.74
0.80
STATIC ELECTRICAL CHARACTERISTICS
Pulse test :
* tp = 5 ms,
δ < 2%
** tp = 380
µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.54 x IF(AV) + 0.0086 x IF
2
(RMS)
0
2468
10
12
14
16
18
20
0
2
4
6
8
10
12
14
IF(av) (A)
PF(av)(W)
T
δ=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS30H100CW
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