2SC5624 datasheet(1/7 Pages) RENESAS

部品番号	2SC5624

部品情報	Silicon NPN Epitaxial High Frequency Low Noise Amplifier

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メーカー	RENESAS [Renesas Technology Corp]

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Rev.3.00, Feb.21.2005, page 1 of 6

2SC5624

Silicon NPN Epitaxial

High Frequency Low Noise Amplifier

REJ03G0129-0300

Rev.3.00

Feb.21.2005

Features

• High gain bandwidth product

fT = 28 GHz typ.

• High power gain and low noise figure;

PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Emitter

2. Collector

3. Emitter

4. Base

1

4

3

2

1

4

3

2

Note:

Marking is “VH-”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

10

V

Collector to emitter voltage

VCEO

3.5

V

Emitter to base voltage

VEBO

0.8

V

Collector current

IC

35

mA

Collector power dissipation

Pc

100

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: Value on PCB (40 x 40 x 1.0mm)

同様の部品番号 - 2SC5624

メーカー	部品番号	データシート	部品情報
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