2SC5945 datasheet(1/36 Pages) RENESAS

部品番号	2SC5945

部品情報	Si NPN Epitaxial High Frequency Medium Power Amplifier

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メーカー	RENESAS [Renesas Technology Corp]

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Rev.3.00 Aug 03, 2006 page 1 of 35

2SC5945

Si NPN Epitaxial

High Frequency Medium Power Amplifier

REJ03G0443-0300

Rev.3.00

Aug 03, 2006

Features

• Excellent Linearity

P1dB at output = +26 dBm typ. f = 2.4 GHz

• High Collector to Emitter Voltage

VCEO = 5 V

• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

• 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm).

Outline

1. Collector

2. Collector

3. Collector

4. Emitter

5. Base

6. Emitter

7. Emitter

RENESAS Package code: PWSN0006JA-A

(Package name: HWSON-6 <TNP-6DTV>)

1

3

6

5

4

2

7

1

3

6

5

4

2

Note:

Marking is “5945”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

13

V

Collector to emitter voltage

VCEO

5

V

Emitter to base voltage

VEBO

1.5

V

Collector current

IC

500

mA

Collector power dissipation

Pc

1

Note

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

Value on PCB (40 x 40 x 1.0 mm)

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