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STTH102 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STTH102
部品情報  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  7 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH102 データシート(HTML) 3 Page - STMicroelectronics

  STTH102 Datasheet HTML 1Page - STMicroelectronics STTH102 Datasheet HTML 2Page - STMicroelectronics STTH102 Datasheet HTML 3Page - STMicroelectronics STTH102 Datasheet HTML 4Page - STMicroelectronics STTH102 Datasheet HTML 5Page - STMicroelectronics STTH102 Datasheet HTML 6Page - STMicroelectronics STTH102 Datasheet HTML 7Page - STMicroelectronics  
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STTH102
Characteristics
3/7
Figure 3.
Average forward current versus
ambient temperature (
δ = 0.5) (SMA)
Figure 4.
Average forward current versus
ambient temperature (
δ = 0.5)
(DO-41)
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
R
=120°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
I
(A)
F(AV)
R
=110°C/W
th(j-a)
R=R
th(j-a)
th(j-I)
T
δ=tp/T
tp
T
(°C)
amb
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e(Cu) = 35 µm,
recommended pad layout) (SMA)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
t (s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
Figure 7.
Forward voltage drop versus
forward current
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
(A)
FM
V
(V)
FM
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j
V (V)
R



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