STTH1506TPI datasheet(1/5 Pages) STMICROELECTRONICS

部品番号	STTH1506TPI

部品情報	Tandem 600V Hyperfast Rectifer

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STTH1506TPI

May 2002 - Ed: 1A

Tandem 600V Hyperfast Rectifer

®

The

TURBOSWITCH

“H”

is

an

ultra

high

performance diode composed of two 300V dice in

series. TURBOSWITCH “H” family drastically cuts

losses in the associated MOSFET when run at

high dIF/dt.

DESCRIPTION

s

Especially suited as boost diode in continuous

mode

power

factor

correctors

and

hard

switching conditions.

s

Designed for high di/dt operation. Hyperfast

recovery current to compete with GaAs devices.

Allows downsizing of mosfet and heatsinks.

s

Internal ceramic insulated devices with equal

thermal conditions for both 300V diodes.

s

Insulation (2500V RMS) allows placement on

same

heatsink

as

mosfet

and

flexible

heatsinking on common or separate heatsink.

s

Matched diodes for typical PFC application

without need for voltage balance network.

s

C = 7pF

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

RMS forward current

26

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

130

A

Tstg

Storage temperature range

-65 +150

°C

Tj

Maximum operating junction temperature

+ 150

°C

ABSOLUTE RATINGS (limiting values for both diodes in series)

IF(AV)

15 A

VRRM

600 V (in series)

Tj (max)

150 °C

VF (max)

2.6 V

IRM (typ.)

4.8 A

MAJOR PRODUCTS CHARACTERISTICS

1

2

3

TOP3I

(insulated)

TM: TURBOSWITCH is a trademark of STMicroelectronics

12

3

同様の部品番号 - STTH1506TPI

メーカー	部品番号	データシート	部品情報
Thinki Semiconductor Co...	STTH1506TPI	5Mb / 5P	ThinkiSemi 15A,600V(2x300V) Dual Tandem Structure Ultra Fast Recovery Rectifiers

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