HAF2002 datasheet(2/9 Pages) RENESAS

部品番号	HAF2002

部品情報	Silicon N Channel MOSFET Series Power Switching

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メーカー	RENESAS [Renesas Technology Corp]

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HAF2002

Rev.3.00 Sep 07, 2005 page 2 of 8

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

VGSS

Gate to source voltage

VGSS

–2.8

Drain current

Drain peak current

ID (pulse)

Note 1

Body-drain diode reverse drain current

IDR

Channel dissipation

Pch

Note 2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Ta = 25

°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

VIH

3.5

—

Input voltage

VIL

—

1.2

IIH1

—

100

µA

Vi = 8 V, VDS = 0

IIH2

—

µA

Vi = 3.5 V, VDS = 0

Input current

(Gate non shut down)

IIL

—

µA

Vi = 1.2 V, VDS = 0

IIH (sd) 1

—

0.8

—

Vi = 8 V, VDS = 0

Input current

(Gate shut down)

IIH (sd) 2

—

0.35

—

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

VOP

3.5

—

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