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2SC2855 データシート(PDF) 5 Page - Renesas Technology Corp

部品番号 2SC2855
部品情報  Silicon NPN Epitaxial
PDF  12 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC2855 データシート(HTML) 5 Page - Renesas Technology Corp

  2SC2855 Datasheet HTML 1Page - Renesas Technology Corp 2SC2855 Datasheet HTML 2Page - Renesas Technology Corp 2SC2855 Datasheet HTML 3Page - Renesas Technology Corp 2SC2855 Datasheet HTML 4Page - Renesas Technology Corp 2SC2855 Datasheet HTML 5Page - Renesas Technology Corp 2SC2855 Datasheet HTML 6Page - Renesas Technology Corp 2SC2855 Datasheet HTML 7Page - Renesas Technology Corp 2SC2855 Datasheet HTML 8Page - Renesas Technology Corp 2SC2855 Datasheet HTML 9Page - Renesas Technology Corp Next Button
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2SC2855, 2SC2856
3
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min
Typ
Max Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
90
120
V
I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
90
120
V
I
C = 1 mA, RBE =
Emitter to base
breakdown voltage
V
(BR)EBO
5
—5
——
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
0.1
0.1
µA
V
CB = 70 V, IE = 0
Emitter cutoff current
I
EBO
0.1
0.1
µA
V
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
800
250
800
V
CE = 12 V, IC = 2 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
0.05
0.10 —
0.05 0.10
V
I
C = 10 mA, IB = 1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
0.7
1.0
0.7
1.0
V
Gain bandwidth product
f
T
310
310
MHz
V
CE = 6 V, IC = 10 mA
Collector output
capacitance
Cob
3
3
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
0.15
1.5
0.15 1.5
dB
V
CE = 6 V, IC = 0.1 mA,
R
g = 10 kΩ, f = 1 kHz
0.2
2.0
0.2
2.0
dB
V
CE = 6 V, IC = 0.1 mA,
R
g = 10 kΩ, f = 10 Hz
Noise voltage referred to
input
e
n
0.7
0.7
nV/
√Hz V
CE = 6 V, IC = 10 mA,
R
g = 0, f = 1 kHz
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h
FE as follows.
2. Pulse test
DE
250 to 500
400 to 800



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