FS5ASJ-06F datasheet(2/7 Pages) RENESAS

2 / 7 page

FS5ASJ-06F

Rev.1.00, Aug.20.2004, page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

TYP.

Max.

Unit

Test conditions

Drain-source breakdown voltage

V(BR)DSS

—

ID = 1 mA, VGS = 0 V

Gate-source breakdown voltage

V(BR)GSS

±20

—

IG =

±100 µA, VDS = 0 V

Drain-source leakage current

IDSS

—

100

µAVDS = 60 V, VGS = 0 V

Gate-source leakage current

IGSS

——

±10

µAVGS = ±20 V, VDS = 0 V

Gate-source threshold voltage

VGS(th)

1.0

1.5

2.0

ID = 1 mA, VDS = 10 V

Drain-source on-state resistance

rDS(ON)

—

110

140

Ω

ID = 2 A, VGS = 10 V

Drain-source on-state resistance

rDS(ON)

—

140

190

Ω

ID = 2 A, VGS = 4 V

Drain-source on-state voltage

VDS(ON)

—

0.22

0.28

ID = 2 A, VGS = 10 V

Forward transfer admittance

| yfs |—

6.0

—

ID = 2 A, VDS = 10 V

Input capacitance

Ciss

—

340

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—4—

Rise time

—10—

Turn-off delay time

td(off)

—35—

Fall time

—17—

VDD = 30 V, ID = 2 A,

VGS = 10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—1.0

1.5

IS = 2 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

8.33

°C/W

Channel to case

Reverse recovery time

trr

—30—

IS = 5 A, dis/dt = –100 A/

µs

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