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HTT1127ERTL-E データシート(PDF) 6 Page - Renesas Technology Corp

部品番号 HTT1127ERTL-E
部品情報  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1127ERTL-E データシート(HTML) 6 Page - Renesas Technology Corp

  HTT1127ERTL-E Datasheet HTML 1Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 2Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 3Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 4Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 5Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 6Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 7Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 8Page - Renesas Technology Corp HTT1127ERTL-E Datasheet HTML 9Page - Renesas Technology Corp  
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HTT1127E
Rev.1.00 Aug 10, 2005 page 6 of 8
Q2 Main Characteristics
20
16
12
8
4
12
3
4
5
6
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
200
100
0
0.1
1.0
10
100
IB = 20 µA
40
µA
60
µA
80
µA
100
µA
120 µA
140 µA
160 µA
VCE = 1 V
VCE = 1 V
0
180 µA
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Typical Forward Transfer Characteristics
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.8
0.6
0.4
0.2
0
0.2
0.4
0.6
1.0
Emitter ground
f = 1 MHz
1.0
0.8
6
4
3
2
1
0
12
5
10
20
50
100
Collector Current IC (mA)
Noise Figure vs. Collector Current
5
VCE = 1 V
f = 900 MHz
VCE = 1 V
VCE = 2 V
10
6
12
8
4
0
12
5
10
20
50
100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
f = 1 GHz
VCE = 2 V
VCE = 1 V
2



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