FS30KMJ-3 datasheet(1/7 Pages) RENESAS

部品番号	FS30KMJ-3

部品情報	High-Speed Switching Use Nch Power MOS FET

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メーカー	RENESAS [Renesas Technology Corp]

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1 / 7 page

Rev.2.00

Aug 07, 2006

page 1 of 6

FS30KMJ-3

High-Speed Switching Use

Nch Power MOS FET

REJ03G1415-0200

(Previous: MEJ02G0080-0101)

Rev.2.00

Aug 07, 2006

Features

• Drive voltage : 4 V

• V

DSS : 150 V

• r

DS(ON) (max) : 86 m

Ω

• I

D : 30 A

• Integrated Fast Recovery Diode (TYP.) : 100 ns

• Viso : 2000 V

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1

1. Gate

2. Drain

3. Source

3

2

1

3

2

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

VDSS

150

V

VGS = 0 V

Gate-source voltage

VGSS

±20

V

VDS = 0 V

Drain current

ID

30

A

Drain current (Pulsed)

IDM

120

A

Avalanche drain current (Pulsed)

IDA

30

A

L = 100

µH

Source current

IS

30

A

Source current (Pulsed)

ISM

120

A

Maximum power dissipation

PD

30

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Isolation voltage

Viso

2000

V

AC for 1 minute,

Terminal to case

Mass

—

2.0

g

Typical value

同様の部品番号 - FS30KMJ-3

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Mitsubishi Electric Sem...	FS30KMJ-3	43Kb / 4P	HIGH-SPEED SWITCHING USE
Powerex Power Semicondu...	FS30KMJ-3	48Kb / 4P	Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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