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APM4034NU データシート(PDF) 2 Page - Anpec Electronics Coropration

部品番号 APM4034NU
部品情報  N-Channel Enhancement Mode MOSFET
PDF  10 Pages
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メーカー  ANPEC [Anpec Electronics Coropration]
ホームページ  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM4034NU データシート(HTML) 2 Page - Anpec Electronics Coropration

  APM4034NU Datasheet HTML 1Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 2Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 3Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 4Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 5Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 6Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 7Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 8Page - Anpec Electronics Coropration APM4034NU Datasheet HTML 9Page - Anpec Electronics Coropration Next Button
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Copyright
© ANPEC Electronics Corp.
Rev. A.1 - Mar., 2007
www.anpec.com.tw
2
APM4034NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TC=25°C
20*
A
TC=25°C
40
IDP
300
µs Pulse Drain Current Tested
TC=100°C
20
A
TC=25°C
20*
ID
Continuous Drain Current
TC=100°C
10
A
TC=25°C
50
PD
Maximum Power Dissipation
TC=100°C
20
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Notes
：
* Current limited by bond wire.
Electrical Characteristics (T
A = 25°C unless otherwise noted)
APM4034NU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250
µA
40
V
VDS=32V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TJ=85°C
30
µA
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250
µA
1.5
2
3
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
±100
nA
VGS=10V, IDS=10A
29
37
RDS(ON)
a Drain-Source On-state Resistance
VGS=5V, IDS=5A
45
62
m
Ω
Diode Characteristics
VSD
a
Diode Forward Voltage
ISD=2A, VGS=0V
0.8
1.1
V
trr
Reverse Recovery Time
16
ns
Qrr
Reverse Recovery Charge
ISD=10A, dISD/dt =100A/
µs
8
nC



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