W8NB80 datasheet(1/5 Pages) STMICROELECTRONICS

部品番号	W8NB80

部品情報	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET

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STW8NB80

N - CHANNEL 800V - 1.2

Ω - 7.5A - TO-247

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.2

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

INTERNAL SCHEMATIC DIAGRAM

January 1999

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

7.5

A

ID

Drain Current (continuous) at Tc = 100

oC

4.7

A

IDM(

•)

Drain Current (pulsed)

30

A

Ptot

Total Dissipation at Tc = 25

o C

170

W

Derating Factor

1.36

W/

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 7.5 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW8NB80

800 V

< 1.6

Ω

7.5 A

1/5

同様の部品番号 - W8NB80

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STMicroelectronics	W8NB100	50Kb / 5P	N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET Mar-1999

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同様の説明 - W8NB80

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