W9NB90 datasheet(1/8 Pages) STMICROELECTRONICS

部品番号	W9NB90

部品情報	N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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STW9NB90

N-CHANNEL 900V - 0.85

Ω - 9.7A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.85

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

900

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

900

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC9.7

A

ID

Drain Current (continuous) at Tc =100

oC6

A

IDM (

•)

Drain Current (pulsed)

38

A

Ptot

T otal Dissipation at Tc =25

oC190

W

Derating Factor

1.52

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) I SD

≤ 9.7A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 9NB90

900 V

< 1

Ω

9. 7 A

July 1999

1

2

3

TO-247

1/8

同様の部品番号 - W9NB90

メーカー	部品番号	データシート	部品情報
STMicroelectronics	W9N150V	151Kb / 9P	N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH??Power MOSFET 24-May-2007
	W9NK70Z	664Kb / 14P	N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ 줡ower MOSFET April 2002
	W9NK90Z	577Kb / 16P	N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET 20-Jul-2006

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同様の説明 - W9NB90

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STP8NC60	326Kb / 9P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET Jul-2001
	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW5NB90	85Kb / 8P	N - CHANNEL 900V - 2.3ohm - 5.6A - TO-247 PowerMESH MOSFET Mar-1999
	STW6NB90	51Kb / 5P	N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET Feb-1999
	STW6NC90Z	243Kb / 8P	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™ III MOSFET Oct-2000
	STW7NC90Z	243Kb / 8P	N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET May-2001
	STW8NB90	311Kb / 9P	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET Jul-2001
	STW8NC90Z	251Kb / 8P	N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH™ II MOSFET Jul-2000
	STW9NB80	86Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
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