STY25NA60 datasheet(1/8 Pages) STMICROELECTRONICS

部品番号	STY25NA60

部品情報	N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET

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STY25NA60

N - CHANNEL 600V - 0.225

Ω - 25 A - Max247

EXSTREMELY LOW GATE CHARGE POWER MOSFET

s

TYPICAL RDS(on) = 0.225

Ω

s

EFFICIENT AND RELIABLE MOUNTING

THROUGH CLIP

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

GATE CHARGE MINIMIZED

s

REDUCED VOLTAGE SPREAD

DESCRIPTION

The Max247

™ package is a new high volume

power package exibiting the same footprint as the

industry standard TO-247, but designed to acco-

modate much larger silicon chips, normally sup-

plied in bigger packages such as TO-264.The in-

creased die capacity makes the device idealto re-

duce component count in multiple paralleled de-

signs and save board space with respect to larger

packages.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC25

A

ID

Drain Current (continuous) at Tc = 100

oC

16.5

A

IDM(

•)

Drain Current (pulsed)

100

A

Ptot

T otal Dissipat ion at Tc =25

oC300

W

Derating F act or

2.4

W /

o C

Tstg

Storage Temperature

-55 to 150

o C

Tj

Max. O perating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STY25NA60

600 V

< 0.24

Ω

25 A

1

2

3

Max247

™

1/8

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