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Document Number 85541

Rev. 1.6, 16-Feb-07

BAS33/BAS34

Vishay Semiconductors

Electrical Characteristics

Typical Characteristics

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

1000

mV

Reverse current

E

≤ 300 lx, V

R

13

nA

E

≤ 300 lx, V

0.5

μA

E

≤ 300 lx, V

BAS33

0.5

1

nA

E

≤ 300 lx, V

BAS34

0.5

1

nA

Breakdown voltage

BAS33

40

V

BAS34

70

V

Diode capacitance

3pF

Figure 1. Reverse Current vs. Junction Temperature

040

80

120

160

1

10

100

1000

10000

200

94 9079

Scattering Limit

Figure 2. Forward Current vs. Forward Voltage

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

2.0

94 9078

Scattering Limit

94 9366

26 min. (1.024)

3.9 max. (0.154)

26 min. (1.024)

Cathode Identification

Rev. 6 - Date: 29.January 2007

Document no.: 6.560-5004.02-4