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26MB20A データシート(PDF) 2 Page - Vishay Siliconix |
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26MB20A データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93563 2 Revision: 27-Jun-08 MB Series Vishay High Power Products Single Phase Bridge (Power Modules), 25/35 A FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 26MB-A 36MB-A UNITS Maximum DC output current at case temperature IO Resistive or inductive load 25 35 A Capacitive load 20 28 65 60 °C Maximum peak, one-cycle non-repetitive forward current IFSM t = 10 ms No voltage reapplied Initial TJ = TJ maximum 400 475 A t = 8.3 ms 420 500 t = 10 ms 100 % VRRM reapplied 335 400 t = 8.3 ms 350 420 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 790 1130 A2s t = 8.3 ms 725 1030 t = 10 ms 100 % VRRM reapplied 560 800 t = 8.3 ms 512 730 Maximum I2 √t for fusing I2 √tI2t for time t x = I2√t × √tx; 0.1 ≤ tx ≤ 10 ms, VRRM = 0 V 5.6 11.3 kA2 √s Low level value of threshold voltage VF(TO)1 (16.7 % x π x I F(AV) < I < π x IF(AV)), TJ maximum 0.76 0.79 V High level value of threshold voltage VF(TO)2 (I > π x I F(AV)), TJ maximum 0.92 0.96 Low level forward slope resistance rt1 (16.7 % x π x I F(AV) < I < π x IF(AV)), TJ maximum 6.8 5.8 m Ω High level forward slope resistance rt2 (I > π x I F(AV)), TJ maximum 5.0 4.5 Maximum forward voltage drop VFM TJ = 25 °C, IFM = 40 Apk (26MB) tp = 400 µs 1.11 1.14 V TJ = 25 °C, IFM = 55 Apk (36MB) Maximum DC reverse current IRRM TJ = 25 °C, per diode at VRRM 10 µA RMS isolation voltage base plate VINS f = 50 Hz, t = 1 s 2700 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 26MB-A 36MB-A UNITS Junction and storage temperature range TJ, TStg - 55 to 150 °C Maximum thermal resistance junction to case per bridge RthJC 1.7 1.2 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.2 Approximate weight 20 g Mounting torque ± 10 % Bridge to heatsink 2.0 Nm |
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