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MBRF20H100CT データシート(PDF) 3 Page - Vishay Siliconix |
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MBRF20H100CT データシート(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() MBR(F,B)20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Document Number: 88673 Revision: 08-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode 0.1 0.2 0.6 0.7 0.8 0.9 0.3 100 10 0.1 0.01 1 0.4 0.5 1.0 T J = 100 °C T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C Instantaneous Forward Voltage (V) 1 1000 0.01 0.1 10 000 100 10 20 100 40 60 80 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 150 °C T J = 125 °C T J = 25 °C Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 0.1 10 1 100 1000 10 000 10 100 Reverse Voltage (V) 0.01 0.1 1 10 10 100 0.1 1 t - Pulse Duration (s) |
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