| データシートサーチシステム |
|
THBT200S データシート(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
THBT200S データシート(HTML) 1 Page - STMicroelectronics |
|
1 / 7 page ![]() Application Specific Discretes A.S.D. ™ THBT200S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION ® DUAL BIDIRECTIONALCROWBARPROTECTION. PEAK PULSE CURRENT : -IPP = 75 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. FEATURES This monolithic protection device has been espe- cially designed to protect subscriber line cards.The THBT200 device is particularly suitable to protect ring generator relay against transient overvol- tages. DESCRIPTION February 1998 Ed: 2 SCHEMATIC DIAGRAM 1 2 3 4 NC Ti p Ri n g GND CCITT K20 : 10/700 µs 1kV 5/310 µs 25A VDE 0433 : 10/700 µs 2kV 5/310 µs 50A VDE 0878 : 1.2/50 µs 1.5kV 1/20 µs 40A FCC part 68 : 2/10 µs 2.5kV 2/20 µs 225A (*) BELLCORE TR-NWT-001089 : 2/10 µs 2.5kV 2/10 µs 225A (*) 10/1000 µs 1kV 10/1000 µs 75A (*) (*) with series resistors or PTC. COMPLIESWITHTHE FOLLOWINGSTANDARDS: SIP3 TM: ASD is trademarks of SGS-THOMSON Microelectronics. 1/7 |
同様の部品番号 - THBT200S |
|
同様の説明 - THBT200S |
|
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |