RMB2S & RMB4S

Vishay General Semiconductor

Document Number: 88705

Revision: 01-Feb-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.3

0.5

0.7

0.9

1.1

1.3

1.5

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

Pulse Width = 300 µs

1 % Duty Cycle

T

T

0

20

40

60

80

100

0.01

0.1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

1

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

0

5

10

15

20

25

30

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.029 (0.74)

0.017 (0.43)

0 to 8°

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.252 (6.40)

0.272 (6.90)

0.106 (2.70)

0.090 (2.30)

0.0075 (0.19)

0.0065 (0.16)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0.144 (3.65)

0.161 (4.10)

0.205 (5.21)

0.195 (4.95)

0.114 (2.90)

0.094 (2.40)

0.038 (0.96)

0.019 (0.48)

0.272 MAX.

(6.91 MAX.)

0.030 MIN.

(0.76 MIN.)

0.023 MIN.

(0.58 MIN.)

0.105 (2.67)

0.095 (2.41)

TO-269AA (MBS)

Mounting Pad Layout