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VN770 データシート(PDF) 7 Page - STMicroelectronics

部品番号 VN770
部品情報  QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS
PDF  10 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN770 データシート(HTML) 7 Page - STMicroelectronics

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 7 / 10 page
background image
OFF
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
V(BRDSS)
Drain-source
Brekdown Voltage
ID =250
µA VGS =0
60
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating, TC =125
oC
1
10
µA
µA
IGSS
Gate-Body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
1.0
2.5
V
RDS(on)
St atic Drain-Source
On Resistance
VGS =10 V
ID =18 A
0.032
0.04
Ω
ID(on)
On Stat e Drain
Current (VDS =0)
VDS >ID(on ) xRDS(o n)max
VGS =10 V
36
A
DYNAMIC
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
gfs (
∗)Forward
Transconductance
VDS >ID(on ) xRDS(o n)max
ID = 18A
7
S
Ciss
Cos s
Crs s
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
2115
260
65
2800
350
90
pF
pF
pF
SWITCHING-ON (**)
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
td(o n)
tr
Turn-on Time
Rise Time
VDD =30 V
ID =18 A
RG =4.7
Ω
VGS =10 V
28
85
40
115
ns
ns
(di/dt )on
Turn-on Current Slope
VDD =48 V
ID =36 A
RG =47
Ω
VGS =10 V
250
A/
µs
Qg
Qgs
Qgd
Tot al Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48 V
ID =36 A
VGS =10 V
50
13
18
70
nC
nC
nC
SWITCHING-OFF
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
tr(Voff)
tr
tc
Of f-Voltage Rise Time
Fall Time
Cross-Over Time
VDD =48 V
ID =36 A
RG =4.7
Ω
VGS =10 V
12
25
40
16
35
55
ns
ns
ns
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (Tcase =25
o C unless otherwise
specified)
VN770
7/10



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