VN770P datasheet(8/11 Pages) STMICROELECTRONICS

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gfs (

∗)Forward

Transconductance

VDS =13 V

ID =7 A

Cos s

Output Capacitance

VDS =13 V

f = 1 MHz

Vin = 0

400

500

SWITCHING (**)

Symbol

Parameter

Test Co ndi tio ns

Min.

Typ .

Max.

Uni t

td(o n)

td(o ff)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =15 V

Id =7A

Vgen =10 V

Rgen =10

Ω

(see figure 3)

160

250

100

120

300

400

200

td(o n)

td(o ff)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =15 V

Id =7 A

Vgen =10 V

Rgen =1000

Ω

(see figure 3)

300

1.5

5.5

1.8

500

2.2

7.5

2.5

µs

(di/dt )on

Turn-on Current Slope

VDD =15 V

ID =7A

Vin =10 V

Rgen =10

Ω

120

µs

Tot al Input Charge

VDD =12 V

ID =7 A

Vin = 10 V

SOURCE DRAIN DIODE

Symbol

Parameter

Test Co ndi tio ns

Min.

Typ .

Max.

Uni t

VSD (

∗)Forward On Voltage

ISD =10 A

Vin =0

1.6

trr (

∗∗)

Qrr (

∗∗)

IRRM (

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =7 A

di/dt =100 A/

µs

VDD =30 V

Tj =25

o C

(see test circuit, figure 5)

110

0. 34

6.1

µC

PROTECTION

Symbol

Parameter

Test Co ndi tio ns

Min.

Typ .

Max.

Uni t

Tjsh (

∗∗) Overtemperature

Shutdown

150

Tjrs (

∗∗)

Ov ert emperat ure Reset

135

Igf (

∗∗)

Fault Sink Current

Vin =10 V

VDS =13 V

Vin =5 V

VDS =13 V

Ilim

Drain Current Limit

Vin =10 V

VDS =13 V

Vin =5 V

VDS =13 V

tdlim (

∗∗) Step Response

Current Limit

Vin =10 V

Vin =5 V

150

µs

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)

VN770P

8/11

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