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VN771P データシート(PDF) 8 Page - STMicroelectronics

部品番号 VN771P
部品情報  QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
PDF  11 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VN771P データシート(HTML) 8 Page - STMicroelectronics

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SWITCHING (**)
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
td(o n)
tr
td(o ff)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =15 V
Id =10 A
Vgen =10 V
Rgen =10
Ω
(see figure 3)
100
330
400
155
200
600
700
300
ns
ns
ns
ns
td(o n)
tr
td(o ff)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =15 V
Id =10 A
Vgen =10 V
Rgen = 1000
Ω
(see figure 3)
450
1.7
7.5
3.4
700
3
10
5
ns
µs
µs
µs
(di/dt )on
Turn-on Current Slope
VDD =15 V
ID =10 A
Vin =10 V
Rgen =10
Ω
35
A/
µs
Qi
Total I nput Charge
VDD =12 V
ID =10 A
Vin =10 V
60
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
VSD (
∗)
Forward O n Volt age
ISD =10 A
Vin =0
1.6
V
trr (
∗∗)
Qrr (
∗∗)
IRRM (
∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 10 A
di/dt = 100 A/
µs
VDD =30 V
Tj =25
oC
(see test circuit, figure 5)
180
0.45
7
ns
µC
A
PROTECTION
Symbol
Parameter
Test Co ndi tio ns
Min.
Typ .
Max.
Uni t
Tjsh (
∗∗) Overtemperature
Shutdown
150
oC
Tjrs (
∗∗)
Ov ert emperature Reset
135
oC
Igf (
∗∗)
Fault Sink Current
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
50
20
mA
mA
Ilim
Drain Current Limit
Vin =10 V
VDS =13 V
Vin =5 V
VDS =13 V
20
20
28
28
40
40
A
A
tdlim (
∗∗) Step Response
Current Limit
Vin =10 V
Vin =5 V
25
70
40
120
µs
µs
Eas (
∗∗)
Single Pulse Avalance
Energy
st art ing Tj =25
oC
Vin =10 V
VDD =20 V
Rgen =1K
Ω L= 10 mH
2.5
J
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
∗∗) Parameters guaranteed by design/characterization
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)
VN771P
8/11



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