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VNP10N07 データシート(PDF) 2 Page - STMicroelectronics

部品番号 VNP10N07
部品情報  O"MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
PDF  11 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNP10N07 データシート(HTML) 2 Page - STMicroelectronics

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ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Val ue
Unit
VDS
Drain-source Voltage (Vin = 0)
I nternally Clamped
V
Vin
Input Voltage
18
V
ID
Drain Current
Internally Limit ed
A
IR
Reverse DC O utput Current
-14
A
Vesd
Electrostatic Discharge (C= 100 pF , R=1.5 K
Ω)
2000
V
Pto t
Total Dissipat ion at Tc =25
oC50
W
Tj
Operating Junction T emperature
Internally Limit ed
oC
Tc
Case Operating T emperature
Internally Limit ed
oC
Tst g
St orage Temperature
-55 to 150
oC
THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2.5
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VCLAMP
Drain-source Clamp
Voltage
ID = 200 mA
Vin = 0
60
70
80
V
VCLTH
Drain-source Clamp
Threshold Voltage
ID =2 mA
Vin =0
55
V
VINCL
Input-Source Reverse
Clamp Volt age
Iin =-1 mA
-1
-0.3
V
IDSS
Zero Input Voltage
Drain Current (Vin =0)
VDS =13 V
Vin =0
VDS =25 V
Vin =0
50
200
µA
µA
IISS
Supply Current from
Input Pin
VDS =0 V
Vin = 10 V
250
500
µA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VIN(th)
Input Threshold
Voltage
VDS =Vin
ID +Iin =1 mA
0. 8
3
V
RDS( on)
St atic Drain-source On
Resistance
Vin =10 V
ID =5 A
Vin =5 V
ID =5 A
0.1
0.14
Ω
Ω
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS =13 V
ID =5 A
6
8
S
Coss
Output Capacit ance
VDS = 13V
f = 1MHz
Vin = 0
350
500
pF
VNP10N07
2/11



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