データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

Preview PDF HTML

IRF820-252 データシート(PDF) 2 Page - Suntac Electronic Corp.

部品番号 IRF820-252
部品情報  POWER MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  SUNTAC [Suntac Electronic Corp.]
ホームページ  
Logo SUNTAC - Suntac Electronic Corp.

IRF820-252 データシート(HTML) 2 Page - Suntac Electronic Corp.

  IRF820-252 Datasheet HTML 1Page - Suntac Electronic Corp. IRF820-252 Datasheet HTML 2Page - Suntac Electronic Corp. IRF820-252 Datasheet HTML 3Page - Suntac Electronic Corp. IRF820-252 Datasheet HTML 4Page - Suntac Electronic Corp. IRF820-252 Datasheet HTML 5Page - Suntac Electronic Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
IRF820
POWER MOSFET
Page 2
ORDERING INFORMATION
Part Number
Package
IRF820-251............................................TO-251
..................IRF820-252............................................TO-252
..................IRF820-220............................................TO-220
..................IRF820-220FP
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
IRF820
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125
)
IDSS
0.1
1.0
mA
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.2A) *
RDS(on)
4.4
Forward Transconductance (VDS
50 V, ID = 1.0A) *
gFS
1.4
mhos
Input Capacitance
Ciss
435
pF
Output Capacitance
Coss
56
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
9.2
pF
Turn-On Delay Time
td(on)
12
ns
Rise Time
tr
21
ns
Turn-Off Delay Time
td(off)
30
ns
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18 ) *
tf
24
ns
Total Gate Charge
Qg
13
22
nC
Gate-Source Charge
Qgs
2.0
nC
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
Qgd
6.0
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
1.5
V
Forward Turn-On Time
ton
**
ns
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
trr
340
ns
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance



Html Pages

1 2 3 4 5


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか？  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com