TC429EPA datasheet(3/7 Pages) TELCOM

3 / 7 page

4-177

TELCOM SEMICONDUCTOR, INC.

ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V

≤ VDD ≤ 18V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1, High Input Voltage

2.4

—

VIL

Logic 0, Low Input Voltage

—

0.8

IIN

Input Current

≤ VIN ≤ VDD

– 10

—

µA

Output

VOH

High Output Voltage

VDD – 0.025

—

VOL

Low Output Voltage

—

0.025

Output Resistance

VIN = 0.8V,

—

Ω

IOUT = 10 mA, VDD = 18V

VIN = 2.4V,

—

IOUT = 10 mA, VDD = 18V

Switching Time (Note 1)

Rise Time

Figure 1, CL = 2500pF

—

nsec

Fall Time

Figure 1, CL = 2500pF

—

nsec

tD1

Delay Time

Figure 1

—

100

nsec

tD2

Delay Time

Figure 1

—

120

nsec

Power Supply

Power Supply Current

VIN = 3V

—

VIN = 0V

—

NOTE:

1. Switching times guaranteed by design.

SWITCHING SPEED

Figure 1. Inverting Driver Switching Time Test Circuit

CL= 2500 pF

OUTPUT

0.1

µF

INPUT

TC429

VDD = 18V

+5V

18V

OUTPUT

90%

10%

tD1

tD2

90%

INPUT

INPUT: 100 kHz, square wave

tRISE = tFALL ≤ 10 nsec

TC429

6A SINGLE HIGH-SPEED,

CMOS POWER MOSFET DRIVER

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