MMBT4403W datasheet(2/2 Pages) KEXIN

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SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage *

V(BR)CEO

IC =-1.0mA, IB =0

-40

Collector-base breakdown voltage

V(BR)CBO

IC =-0.1mA, IE =0

-40

Emitter-base breakdown voltage

V(BR)EBO

IE =-0.1mA, IC =0

-5

Base cutoff current

IBEV

VCE =-35 V, VEB =-0.4V

-0.1

ìA

Collector cutoff current

ICEX

VCE =-35 V, VEB =-0.4V

-0.1

ìA

DC current gain

HFE

IC =-0.1mA, VCE =-1.0V

IC =-1.0mA, VCE =-1.0V

IC =-10 mA, VCE =-1.0V

IC = -150 mA, VCE =-2.0V *

IC = -500 mA, VCE =-2.0V *

100

300

VCE(sat)

IC = -150 mA, IB =-15 mA

-0.4

IC = -500 mA, IB =-50 mA

-0.75

VBE(sat)

IC = -150 mA, IB =-15 mA

-0.75

-0.95

IC = -500 mA, IB =-50 mA

-1.3

Current-gain-bandwidth product

IC =-20 mA, VCE = -10 V, f = 100 MHz

200

MHz

Collector-base capacitance

CCb

VCB =-10 V, IE = 0, f = 1.0 MHz

8.5

Emitter-base capacitance

Ceb

VBE =-0.5V, IC = 0, f = 1.0 MHz

Input impedance

hie

IC =-1.0mA, VCE = -10 V, f = 1.0 kHz

1.5

kÙ

Voltage feedback ratio

hre

IC =-1.0mA, VCE = -10 V, f = 1.0 kHz

0.1

8.0

X10

-4

Small-signal current gain

hfe

IC =-1.0mA, VCE = -10 V, f = 1.0 kHz

500

Output admittance

hoe

IC =-1.0mA, VCE = -10 V, f = 1.0 kHz

1.0

100

ìmhos

Delay time

VCC =-30 V, VEB =-2.0V,

Rise time

IC = -150 mA, IB1 = -15 mA

Storage time

VCC =-30 V, IC = -150 mA,

225

Fall time

IB1 =IB2 = -15 mA

* Pulse test: pulse width

300 ìs, duty cycle

2.0%.

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

MMBT4403W

Marking

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