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BAS33 データシート(PDF) 2 Page - Vishay Siliconix |
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BAS33 データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 3 page ![]() BAS33.BAS34 Vishay Telefunken Rev. 2, 01-Apr-99 2 (3) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85541 Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1 V Reverse current E x300lx, VR IR 1 3 nA E x300lx, VR, Tj=125°C IR 0.5 mA E x300lx, VR=15V BAS33 IR 0.5 1 nA E x300lx, VR=30V BAS34 IR 0.5 1 nA Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms BAS33 V(BR) 40 V g R m BAS34 V(BR) 70 V Diode capacitance VR=0, f=1MHz CD 3 pF Characteristics (Tj = 25_C unless otherwise specified) 0 40 80 120 160 1 10 100 1000 10000 Tj – Junction Temperature ( °C ) 200 94 9079 Scattering Limit VR =VRRM Figure 1. Reverse Current vs. Junction Temperature 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF – Forward Voltage ( V ) 2.0 94 9078 Scattering Limit Tj =25°C Figure 2. Forward Current vs. Forward Voltage Dimensions in mm Cathode Identification ∅ 1.7 max. ∅ 0.55 max. 3.9 max. 26 min. technical drawings according to DIN specifications 94 9366 Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g 26 min. |
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