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BU1706AX データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU1706AX データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1706AX DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCESM Collector-Emitter Voltage VBE= 0 1750 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 3 A IBM Base Current-peak 5 A PC Collector Power Dissipation @TC=25℃ 32 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.0 ℃/W isc Website:www.iscsemi.cn |
同様の部品番号 - BU1706AX |
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同様の説明 - BU1706AX |
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