BFR520 datasheet(1/7 Pages) ISC

部品番号	BFR520

部品情報	isc Silicon NPN RF Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

BFR520

DESCRIPTION

·High Power Gain

·High Current Gain Bandwidth Product

·Low Noise Figure

APPLICATIONS

·Designed for RF frontend in wideband applications in the

GHz range,such as analog and digital cellular telephones,

cordless.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCES

Collector-Emitter Voltage

15

V

VEBO

Emitter-Base Voltage

2.5

V

IC

Collector Current-Continuous

70

mA

PC

Collector Power Dissipation

@TC=25℃

0.3

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~150

℃

isc Website：www.iscsemi.cn

同様の部品番号 - BFR520

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BFR520	127Kb / 12P	NPN 9 GHz wideband transistor September 1995
NXP Semiconductors	BFR520	9Mb / 130P	RF Manual 16th edition June 2012
New Jersey Semi-Conduct...	BFR520	80Kb / 2P	Silicon NPN RF Transistor
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NXP Semiconductors	BFR520T	147Kb / 12P	NPN 9 GHz wideband transistor 1999 Oct 18

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