2N5493 datasheet(1/2 Pages) ISC

部品番号	2N5493

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N5493

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 55V(Min)

·Low Saturation Voltage-

: VCE (sat)= 1V(Max)@IC= 2.5A

APPLICATIONS

·Designed for a wide variety of medium-power switching and

amplifier applications , such as series and shunt regulators

and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

75

V

VCEV

Collector-Emitter Voltage

VBE= -1.5V

75

V

VCER

Collector-Emitter Voltage

RBE= 100Ω

65

V

VCEO

Collector-Emitter Voltage

55

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IB

B

Base Current

3

A

Collector Power Dissipation

@ Ta=25℃

1.8

PC

Collector Power Dissipation

@ TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.5

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

70

℃/W

isc Website：www.iscsemi.cn

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