BD721 datasheet(1/2 Pages) ISC

部品番号	BD721

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BD721

DESCRIPTION

·DC Current Gain-

: hFE= 40@ IC= 0.5A

·Collector-Emitter Breakdown Voltage -

: V(BR)CEO= 80V(Min)

·Complement to type BD722

APPLICATIONS

·Designed for use in audio output and general purpose

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

7

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.5

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

100

℃/W

同様の部品番号 - BD721

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	BD721	129Kb / 2P	Silicon NPN Power Transistor

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