BU505DF datasheet(1/3 Pages) ISC

部品番号	BU505DF

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU505DF

DESCRIPTION

・With TO-220Fa package

・High voltage,high speed

・With integrated efficiency diode

APPLICATIONS

・For horizontal deflection circuits of color

TV receivers.

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

2.5

A

ICM

Collector current (peak)

4

A

IB

Base current

2

A

IBM

Base current(peak)

4

A

Ptot

Total power dissipation

TC=25℃

20

W

Tj

Max.operating junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal resistance from junction to ambient

55

K/W

同様の部品番号 - BU505DF

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BU505DF	81Kb / 12P	Silicon diffused power transistors 1997 Aug 13
Savantic, Inc.	BU505DF	123Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BU505DF	125Kb / 3P	Silicon NPN Power Transistors

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同様の説明 - BU505DF

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