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BU506D データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU506D データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU506D DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching speed ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers. ・Line-operated switch-mode applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base current 3 A IBM Base current(peak) 5 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65-150 ℃ |
同様の部品番号 - BU506D |
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同様の説明 - BU506D |
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